Atomic Layer Deposition TFS200 (Beneq Oy)
ALD allows depositing thin films with atomic layer control in a simple and reproducible process, with low impurity contamination, for a variety of applications, with possibility of deposition on very high aspect/ratio structures that need to be coated conformally. No other thin film technique can approach the conformality achieved by ALD on high aspect structures. The advantages of ALD are precise thickness control at the Ångstrom or monolayer level. The self-limiting aspect of ALD leads to excellent step coverage and conformal deposition on high aspect ratio structures. ALD films remain extremely smooth and conformal to the original substrate because the reactions are driven to completion during every reaction cycle. Low temperature ALD enables ALD on thermally sensitive materials such as organic polymers. ALD on polymers may be useful to functionalize the polymer surface, to create unique inorganic/organic polymer composites, and to deposit gas diffusion barriers on polymers. The Beneq TFS200 installed in NM Lab is an ALD tool for thin film processing. It is based on a hot wall, flow-through type reaction chamber. The reaction chamber is located inside a watercooled cold wall vacuum chamber. The system is equipped with a single wafer reaction chamber. Substrates can be silicon wafers (up to 8’’) or other planar substrates. The uniformity of deposition is guaranteed also on high aspect-ratio structures (up to 1/50). The TFS200 ALD system is designed especially for research purposes, which set high demands on flexibility and usability. The hardware is based on Siemens S7 PLC, a highly reliable industrial logic. The system is currently equipped with three room-temperature liquid sources, one HS300 hot source with two interchangeable precursor containers (for liquid and solid precursor materials which need heating to reach sufficient vapor pressure, up to 300°C), and an oxygen gas line. This setup is currently used for deposition of Al2O3, TiO2, ZnO, and Al-doped ZnO (AZO) (liquid source) and Ta2O5 (hot source) thin layers. In addition, the integration of a full ozone line (including ozone generator) and a hydrogen gas line (with extra-pure gas from a hydrogen gas generator) allows the deposition of other types of materials, such as Fe oxides (hematite, magnetite) and metallic layers, using in-situ reduction inside the ALD chamber.
Anton Paar MCR 302 rheometer allows evaluating the viscosity and all the rheological properties of liquid or gel materials. Both rotational and oscillatory tests can be performed; the instrument is equipped with a Peltier thermal system which enables measurements at different temperatures. The Peltier control features are high heating and cooling rates and excellent temperature accuracy, which are essential requirements for reliable rheological measurements. Photorheology system also allows the investigation of UV-initiated curing reactions, following materials' development from their original to their fully cured state. In this case samples such as inks, glues and coatings are loaded onto a glass plate and are then irradiated by a UV light source.